Semiconductor laser device
文献类型：专利
| 作者 | SHIGIHARA, KIMIO |
| 发表日期 | 2011-05-24 |
| 专利号 | US7949027 |
| 著作权人 | MITSUBISHI ELECTRIC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device includes: an n-type cladding layer; a p-type cladding layer; and an optical waveguide portion disposed between the n-type and p-type cladding layers and including spaced-apart active layers. The optical waveguide portion permits lasing in a crystal growth direction of the active layers in at least three modes, including the fundamental mode and two higher order modes. The number of active layers is equal to or greater than the number of extreme points of the electric field of a particular one of the higher order modes. At least one of the active layers is disposed near each extreme point of the electric field of the particular higher order mode, within the optical waveguide portion. |
| 公开日期 | 2011-05-24 |
| 申请日期 | 2009-03-20 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80883]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORPORATION |
| 推荐引用方式 GB/T 7714 | SHIGIHARA, KIMIO. Semiconductor laser device. US7949027. 2011-05-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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