Semiconductor laser device
文献类型：专利
| 作者 | MIHASHI YUTAKA; MATSUBARA HIROSHI; MURAKAMI TAKASHI; NAGAI YUTAKA |
| 发表日期 | 1986-06-09 |
| 专利号 | JP1986121382A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To enable high-efficiency oscillation by low threshold currents by narrowing the width of an opening with a separation from a substrate in a P-type clad layer, forming a groove widened with the separation from the substrate in a current stopping layer and shaping the P-type clad layer, an active layer and an N-type clad layer onto the current stopping layer through a MO- CVD method. CONSTITUTION:When positive voltage is applied to a P side electrode 9 and negative voltage to an N side electrode 10, currents concentrate and flow through a striped groove 8 in which there is no N-type current stopping layer 3, holes from a second P-type AlGaAs clad layer 4 and electrons from an N- type AlGaAs clad layer 6 are injected to a flat section 5a in an AlGaAs active layer 5, and light is emitted by the recombination of both holes and electrons. When currents are further increased and an injection level-is elevated, a laser oscillation is generated. The active layer 5 is bent in the striped groove 8 at that time, and the refractive indices of the left and right of the flat section 5a in the active layer 5 lower because second or first AlGaAs clad layers 4, 2 adjoin, thus substantially forming an intense index waveguide. Accordingly, threshold currents can be reduced, thus improving oscillation efficiency. |
| 公开日期 | 1986-06-09 |
| 申请日期 | 1984-11-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80885]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | MIHASHI YUTAKA,MATSUBARA HIROSHI,MURAKAMI TAKASHI,et al. Semiconductor laser device. JP1986121382A. 1986-06-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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