Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | NAKAMURA HITOSHI; TSUJI SHINJI; MATSUMURA HIROYOSHI; KAYANE NAOKI; OISHI AKIO |
| 发表日期 | 1986-08-06 |
| 专利号 | JP1986174684A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To enable the sufficient connection of a periodical structure with an electromagnetic wave by a method wherein part of the width of at least one of an active layer and layers in close vicinity to the active layer is varied periodically in a buried type DFB laser. CONSTITUTION:SiO2 7 is deposited on a multiple grown layer formed by laying guide layer 2, an active layer 3, a buffer layer 4, a clad layer 5 and a cap layer 6 on a substrate Next, a grating is formed in SiO2 7 so that the cap layer 6 is exposed in an indented portion of the etching grating of SiO2 7, and subsequently, a photoresist 8 having a uniform stripe width being used as a second mask, an oxide film 7 is etched obliquely by dry etching. This etched film 7 being used as an etching mask, the multiple grown layer is etched so that the width of the stripe-shaped multiple grown layer is made to have a periodical structure. Then, the layer is buried with a material having an appropriate refractive index, and thus a buried DFB laser of a refractive index waveguide type is prepared. By this method, periodical variation of a large refractive index can be realized, and a stable state of a uniaxial mode can be obtained. |
| 公开日期 | 1986-08-06 |
| 申请日期 | 1985-01-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80901]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | NAKAMURA HITOSHI,TSUJI SHINJI,MATSUMURA HIROYOSHI,et al. Semiconductor laser and manufacture thereof. JP1986174684A. 1986-08-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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