Semiconductor laser device and method for manufacturing the same
文献类型：专利
| 作者 | ORITA, KENJI; MOCHIDA, ATSUNORI; YURI, MASAAKI |
| 发表日期 | 2006-05-23 |
| 专利号 | US7050472 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device and method for manufacturing the same |
| 英文摘要 | The invention provides a semiconductor laser device including an active layer, a semiconductor layer provided with a diffraction grating, an etch-stop layer, a cladding layer provided with a stripe structure, and a current blocking layer arranged at least on a side of said stripe structure, formed in that order on a substrate. In this semiconductor laser device, the etching-stop layer is formed on the semiconductor layer with the diffraction grating, so that damage of the diffraction grating due to etching can be prevented. The invention also provides a distributed Bragg reflection semiconductor laser device, including an active layer, and a current blocking layer having a stripe-shaped window and a diffraction grating formed at least near an end face thereof. This semiconductor laser device can be manufactured with fewer crystal growth processes than conventional semiconductor laser devices. |
| 公开日期 | 2006-05-23 |
| 申请日期 | 2001-02-28 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80903]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | ORITA, KENJI,MOCHIDA, ATSUNORI,YURI, MASAAKI. Semiconductor laser device and method for manufacturing the same. US7050472. 2006-05-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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