Semiconductor laser device
文献类型：专利
| 作者 | SHIMADA NAOHIRO; MOGI NAOTO |
| 发表日期 | 1985-04-17 |
| 专利号 | JP1985066890A |
| 著作权人 | TOKYO SHIBAURA ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To contrive to reduce the bad influences of return noises, without losing the characteristic of small astigmatism, by a method wherein the thickness of a clad layer is varied along the direction of a groove stripe. CONSTITUTION:A clad layer 12 of n-conductivity type and, an active layer 13 and a clad layer 14 of p-conductivity type are successively grown on a semiconductor substrate 11 of n-conductivity type, resulting in the formation of a double hetero junction. Besides, a current block layer 15 of n-conductivity type grown and formed on the clad layer 14 provided with a stripe groove 16 reaching the layer 14, and a coat layer 17 of p-conductivity type grown and formed on the layer 15 by including the groove 16 are furnished. The layer 14 is formed so as to have at least two kinds of thicknesses to the direction of the stripe. |
| 公开日期 | 1985-04-17 |
| 申请日期 | 1983-09-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80905]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOKYO SHIBAURA ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | SHIMADA NAOHIRO,MOGI NAOTO. Semiconductor laser device. JP1985066890A. 1985-04-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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