Semiconductor laser element
文献类型：专利
| 作者 | MIURA KAZUNORI; SAWAKI IPPEI |
| 发表日期 | 1991-04-10 |
| 专利号 | JP1991084983A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To actuate a semiconductor laser amplifying element stably by forming an optical waveguide type active layer regions, while inclining, at the opposite input and output ends of light. CONSTITUTION:When an injected current flows in a semiconductor laser element 10 and light amplifying action in an optical waveguide type active layer region 1 becomes possible, reflection from two half-mirrors 60 brings out feedback amplifying action. Namely, an external resonator is formed to effect laser oscillation. Input and output ends of light 2 and 3 are inclined to said optical waveguide type active layer region 1 by an angle theta, for example 5 deg. from a vertical plane, so that a reflected light separates away from an original light path by 2theta, namely 10 deg. Thus, coupling of the reflected light with the active layer region 1 can be eliminated perfectly. |
| 公开日期 | 1991-04-10 |
| 申请日期 | 1989-08-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80917]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | MIURA KAZUNORI,SAWAKI IPPEI. Semiconductor laser element. JP1991084983A. 1991-04-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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