Semiconductor laser device
文献类型：专利
| 作者 | MATSUMOTO SHIGETO |
| 发表日期 | 1990-03-23 |
| 专利号 | JP1990082591A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device which has a low threshold current, in which a light can be confined efficiently and which is uniform in quality and has improved mass-productivity by forming a surface having a refractive index distribution on one side of an active layer in parallel with the active layer. CONSTITUTION:An n-type GaAs light absorbing layer 2 as a first semiconductor layer, an n-type AlyGa1-yAs cladding layer 3 as a second semiconductor layer and an n-type GaAs light absorbing layer 4 as a third semiconductor layer are successively built up on an n-type GaAs substrate Then an n-type AlyGa1-yAs cladding layer 5 as a fourth semiconductor layer, an AlxGa1-xAs active layer 6 as a fifth semiconductor layer, a p-type AlyGa1-yAs cladding layer 7 as a sixth semiconductor layer, an n-type AlyGa1-yAs cladding layer 8 and an n-type contact layer 9 as a seventh semiconductor layer are successively built up. Further, a Zn diffused region 10 is formed so as to reach the p-type AlyGa1-yAs cladding layer 7 formed on a step part 13 the surface of the n-type GaAs contact layer 9. Then an n-type side electrode 11 and a p-type side electrode 12 are formed. |
| 公开日期 | 1990-03-23 |
| 申请日期 | 1988-09-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80921]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | MATSUMOTO SHIGETO. Semiconductor laser device. JP1990082591A. 1990-03-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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