半導体レーザ素子及びその製造方法
文献类型：专利
| 作者 | 種谷 元隆; 高橋 向星; 早川 利郎; 松井 完益; 松本 晃広; 細羽 弘之 |
| 发表日期 | 1996-09-05 |
| 专利号 | JP2558744B2 |
| 著作权人 | シャープ株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ素子及びその製造方法 |
| 英文摘要 | PURPOSE:To form a semiconductor laser element having a low threshold current and a small reactive current in high yield by selectively etching a semiconductor layer directly above a fourth layer which becomes a quantum well having thickness of de Broglie wavelength or less of electron wave up to directly above the fourth layer by employing an etching material having etching velocity of the semiconductor layer of 10 times as large as that of the fourth layer. CONSTITUTION:An N-type AlGaAs buffer layer 102, a clad layer 103, an active layer 104, a P-type GaAs etching stop layer 105, a P-type AlGaAS clad layer 105 and a P-type GaAs contact layer 107 are sequentially grown on an N-type GaAs substrate 101, and a mesa 120 is formed to the midway of the layer 106. The layer 106 is selectively etched with buffer solution HF. The layer 105 is not etched with the solution HF. Thus formed semiconductor laser is oscillated 820nm of wavelength in the layer 104, the layer 105 is of an ultrathin layer having 20Angstrom of thickness, its forbidden band width becomes approx. 81eV, and it does not absorb an oscillation light at all. |
| 公开日期 | 1996-11-27 |
| 申请日期 | 1987-10-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80923]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | シャープ株式会社 |
| 推荐引用方式 GB/T 7714 | 種谷 元隆,高橋 向星,早川 利郎,等. 半導体レーザ素子及びその製造方法. JP2558744B2. 1996-09-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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