Manufacture of buried type semiconductor laser
文献类型：专利
| 作者 | SUZAKI SHINZO |
| 发表日期 | 1990-06-19 |
| 专利号 | JP1990159087A |
| 著作权人 | FUJIKURA LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of buried type semiconductor laser |
| 英文摘要 | PURPOSE:To largely reduce a leak path and achieve high output and high efficiency by etching such that the narrowed part of reversed mesa structure is positioned on an active layer. CONSTITUTION:First, a laminated body is formed by successively laminating a p-InP buffer layer 2, an InGaAsP active layer 3, and an n-InP clad layer 4 on a p-InP substrate Next, an SiO2 film is formed on the n-InP clad layer 4, and then etching is carried out so that the narrowed part Ma of reversed mesa is positioned on the active layer 3. Next, a p-InP current blocking layer 8 is grown, and an n-InP current blocking layer 9, a p-InP current blocking layer 10 are successively grown, and then an n-InGaAsP cap layer 7 is grown to form an element. In this way, the side part C of the active layer 3 is positioned at the surface of rapid crystal growth and the crystalline property of the side part C of the active layer 3 is improved. Therefore, when the p-InP current blocking layer 8, which is the first layer, is formed, a sufficiently homogeneous growth is achieved in a very short time at the side part C of the active layer 3, and the side part C and the vicinity thereof are included in a crystal. |
| 公开日期 | 1990-06-19 |
| 申请日期 | 1988-12-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80925]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJIKURA LTD |
| 推荐引用方式 GB/T 7714 | SUZAKI SHINZO. Manufacture of buried type semiconductor laser. JP1990159087A. 1990-06-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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