Semiconductor laser
文献类型：专利
| 作者 | MITSUNAGA KAZUMASA; NUNOSHITA MASAHIRO |
| 发表日期 | 1985-11-22 |
| 专利号 | JP1985235492A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To improve luminous efficiency, and to lower oscillation value currents by forming an active layer held by clad layers in quantum well type potential structure and flowing electrons and holes in the direction parallel with boundary surfaces among the clad layers and the active layer. CONSTITUTION:When well layers 50 are made shorter than the de Broglie wavelength of carriers in a semiconductor, injecting carrier density required for laser oscillation reduces due to a quantum size effect, and oscillation value currents are minimized largely. When differences among the band gaps of barrier layers 9 and the well layers 50 are formed in large values in order to inject carriers in parallel with boundary surfaces among clad layers 4, 6 and an active layer 5, current injection efficiency is not deteriorated, couplings among the well layers can be reduced sufficiently, a quantum level can be made sufficiently higher than the band gaps of the well layers without increasing oscillation value currents, and laser oscillation at short wavelengths is facilitated. Since quantum well type potential structure is formed, gain spectral width is reduced to one several-th of conventional devices, thus resulting in easy single longitudinal mode oscillation. |
| 公开日期 | 1985-11-22 |
| 申请日期 | 1984-05-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80927]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | MITSUNAGA KAZUMASA,NUNOSHITA MASAHIRO. Semiconductor laser. JP1985235492A. 1985-11-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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