半導体レーザ
文献类型：专利
| 作者 | 後藤 勝彦 |
| 发表日期 | 1996-08-22 |
| 专利号 | JP2550711B2 |
| 著作权人 | 三菱電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ |
| 英文摘要 | PURPOSE:To make it possible to reduce an absorption loss due to an impurity and to make possible a low-threshold oscillation by a method wherein diffused regions are formed in isolation from an active layer. CONSTITUTION:A P-type AlGaAs clad layer 2 and an MQW active layer 3 are grown one after the other on a semi-insulative GaAs substrate 1 and thereafter, the layer 3 is formed in a striped form. Subsequently, an N-type AlGaAs clad layer 4 and a GaAs contact layer 5 are grown. Then, Si is selectively diffused in one side of the layer 3, an N-type region 6 is formed in isolation from the layer 3 and moreover, Zn is selectively diffused in the other side of the layer 3, a P-type region 7 is similarly formed in isolation from the layer 3 and electrodes 8 and 9 are respectively formed on the N-type and P-type regions. In such a way, as the diffused regions are formed in isolation from the active layer, an impurity concentration in the active layer and the periphery of the active layer can be reduced. Thereby, an absorption loss due to the absorption of free carriers is reduced and an oscillation in a low threshold current becomes possible. |
| 公开日期 | 1996-11-06 |
| 申请日期 | 1989-06-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80933]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電機株式会社 |
| 推荐引用方式 GB/T 7714 | 後藤 勝彦. 半導体レーザ. JP2550711B2. 1996-08-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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