Semiconductor laser element
文献类型：专利
| 作者 | YAMASHITA SHIGEO; ONO YUICHI; TANAKA TOSHIAKI; YOSHIZAWA MISUZU; KAJIMURA TAKASHI |
| 发表日期 | 1988-08-29 |
| 专利号 | JP1988208292A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser element, which is stably oscillated in a lateral fundamental mode, by making the thickness of a semiconductor clad layer thicker at a light guide part than at the regions on both sides, and providing a semiconductor current constriction layer, which is transparent to laser wavelengths. CONSTITUTION:On a first conductivity type semiconductor substrate 1, at least a first conductivity type first semiconductor clad layer 2, a second semiconductor active layer 3 and a second conductivity type third semiconductor clad layer 4 are provided. The thickness of the third semiconductor clad layer 4 is thicker at a strip shaped light guide part than at the outside of said part. Furthermore, a first conductivity type fourth semiconductor current constriction layer 5 is provided on the third semiconductor clad layer 4 other than a stripe region, whose width is narrower than the strip shaped region. At least a second conductivity type fifth semiconductor embedded layer 7 is further formed on the layer 5. When the fifth semiconductor current constriction layer 7 is constituted with a transparent semiconductor layer, whose refractive index is smaller than that of the semiconductor layer 4 constituting the strip shaped protruding part, a light guiding effect is yielded in the direction parallel to the active layer. Thus stable oscillation occurs in a lateral fundamental mode. |
| 公开日期 | 1988-08-29 |
| 申请日期 | 1987-02-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80937]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | YAMASHITA SHIGEO,ONO YUICHI,TANAKA TOSHIAKI,et al. Semiconductor laser element. JP1988208292A. 1988-08-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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