Semiconductor laser device
文献类型：专利
| 作者 | ODANI JIYUN; MATSUI YASUSHI; UNO TOMOAKI |
| 发表日期 | 1989-06-05 |
| 专利号 | JP1989143281A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To stably generate a ultrashort pulse train by stricture of spectral line width and mode lock by a method wherein an active region and a Y-branched waveguide path are integrated on a semiconductor substrate and a light path difference of 1/4 wavelength is given by carrier injection into a Y-branched light waveguide path or voltage impression and outgoing light from the active region makes two round trips on the Y-branched light wave guide paths so as to return to the active region. CONSTITUTION:Outgoing light from an active region 2 is united in a light waveguide path 3 for being branched into the light waveguide paths 4 and 5. Carriers are injected from an electrode 6 into the light waveguide path 4 so as to lower a refractive index to make a light path difference from the light waveguide path 5 1/4 wavelength and laser light waveguided on the light waveguide paths 4 and 5 is reflected at the end surfaces 8 and 9 with a phase difference of pi/2 and at the time of returning to the Y-branched point, it undergoes a further phase change to be united at the phase difference 2pi for being waveguided on the light waveguide path 3 so as to be returned to the active region 2. That is, laser light outgoing from the active region makes two round trips on the light waveguide paths 4 and 5 so as to again return to the active region. |
| 公开日期 | 1989-06-05 |
| 申请日期 | 1987-11-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80943]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | ODANI JIYUN,MATSUI YASUSHI,UNO TOMOAKI. Semiconductor laser device. JP1989143281A. 1989-06-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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