Semiconductor laser device
文献类型：专利
| 作者 | KAJIMURA TAKASHI; KURODA TAKARO; YAMASHITA SHIGEO; NAKAMURA MICHIHARU; UMEDA JUNICHI |
| 发表日期 | 1986-06-30 |
| 专利号 | JP1986142786A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To decrease stress applied on an active layer, by forming a layer made of one material, which is selected among (GaAl)As, Ga(AsSb), or (InGa)As on a substrate, and forming a GaAlAs double heterostructure on the layer. CONSTITUTION:On a substrate, a layer made of one material selected among (GaAl)As, Ga(AsSb) or (InGa)As is formed. Multilayer films, having a GaAlAs double heterostructure is formed on said layer. For example, on a Ga1-xAlxAs mixed crystal substrate (0.02<=x<=0.4) 1, an N type Ga1-yAlyAs layer (0.5<=y<=0.8) 2, a Ga1-zAlzAs layer (0.15<=z<=0.35) 3, a P type Ga1-uAluAs layer (0.5<=u<=0.8)4 and P type GaAs layer 5 are grown by a liquid phase epitaxial method. Thereafter, a Zn diffused region 8, a P-side electrode 7 and an N-side electrode 6 are formed. |
| 公开日期 | 1986-06-30 |
| 申请日期 | 1985-10-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80948]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | KAJIMURA TAKASHI,KURODA TAKARO,YAMASHITA SHIGEO,et al. Semiconductor laser device. JP1986142786A. 1986-06-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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