Semiconductor light emitting element
文献类型：专利
| 作者 | KAWADA HATSUMI |
| 发表日期 | 1987-04-08 |
| 专利号 | JP1987076693A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element |
| 英文摘要 | PURPOSE:To improve life characteristics, by a constitution wherein an active layer is not present within a specified distance from end surfaces of a resonator; a COD level is increased; a light output, at which end surface breakdown occurs, is enhanced; allowance for the light output is provided; and a load on the active layer is alleviated. CONSTITUTION:In the vicinities of both end surfaces of a resonator, stripe grooves are formed so as to reach an N-type first clad layer 2 beneath an active layer 3. Therefore, the active layer 3 is removed by the stripe grooves. The surface of the N-type first clad layer 2 is covered with a lightguide layer 6. The light, which is generated in the active layer 3, is amplified between end surfaces A and B. In the vicinities of the end surfaces A and B of the resonator, only a semiconductor layer, whose energy gap is larger than the energy of the light, is present. A layer, whose energy gap is small, such as the active layer 3, is not present. Therefore, this part becomes a perfect window for the light from the active layer 3. The light is not absorbed in the vicinities of the end surfaces A and B. Thus, the process of end surface breakdown from heating is prevented. |
| 公开日期 | 1987-04-08 |
| 申请日期 | 1985-09-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80951]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | KAWADA HATSUMI. Semiconductor light emitting element. JP1987076693A. 1987-04-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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