Semiconductor laser
文献类型：专利
| 作者 | OSHIMA MASAAKI; HIRAYAMA NORIYUKI; TSURUTA TORU |
| 发表日期 | 1988-04-26 |
| 专利号 | JP1988095694A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To prevent deterioration, and to obtain a laser having high performance by forming an active layer by second growth. CONSTITUTION:A diffraction grating 1-2 is shaped onto an n-InP substrate 1-1 by using a two-flux interference method and a chemical etching method, etc., and an n-Q layer 1-3, an n-Q layer 1-4, a p-InP layer 1-5, an n InP layer 1-6, and an n-Q layer 1-7 are crystal-grown onto the diffraction grating in succession. An SiO2 insulating film is shaped, a window of SiO2 is bored to a striped shape in 1mum width through a photolithographic means, and the n-Q layer 1-7, the p-InP layer l-6 and the n-Q layer l-4 are removed partially through etching. The SiO2 insulating film is gotten rid of similarly. An n-Q layer active layer 1-8, a p-lnP layer 1-9 and a p-Q layer 1-10 are grown successively through second growth, and electrodes 1-11 and 1-12 are attached, thus manufacturing a laser device. |
| 公开日期 | 1988-04-26 |
| 申请日期 | 1986-10-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80975]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | OSHIMA MASAAKI,HIRAYAMA NORIYUKI,TSURUTA TORU. Semiconductor laser. JP1988095694A. 1988-04-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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