Semiconductor laser
文献类型：专利
| 作者 | KUMABE HISAO |
| 发表日期 | 1986-06-23 |
| 专利号 | JP1986135186A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To realize an arraying for obtaining a high output easily by making the upper surface or lower surface region of an irregular section to cross a first epitaxial layer and forming a crossed region shaped to one of second epitaxial layers. CONSTITUTION:A semiconductor layer 24 is formed onto a semiconductor substrate 30, irregularities consisting of stepped sections 25, 26 are shaped, and N type clad layers 23 as second epitaxial layers having large forbidden band width are formed so that the surfaces of projecting sections on the stepped sections are flattened. An N type active layer 21 as a first epitaxial layer having forbidden band width smaller than the clad layers 23 and a clad layer 22 and a contact layer 29 are each shaped. Crossed regions 27 are formed while crossing the active layer 21 and being diffused so as to reach the inside of the clad layer 22 through heat treatment, and electrodes 31, 32 are shaped. Since the stepped sections are used as diffusion sources in the laser, distances until diffusion fronts reach a semiconductor in the clad layer 22 can be shortened, and the intervals of active regions 28 as P-N junctions can be narrowed in the lateral direction, thus easily realizing an array laser in which the lasers are arranged at extremely high density. |
| 公开日期 | 1986-06-23 |
| 申请日期 | 1984-12-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80982]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KUMABE HISAO. Semiconductor laser. JP1986135186A. 1986-06-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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