Semiconductor laser device
文献类型：专利
| 作者 | SHIOZAWA HIDEO; ISHIKAWA MASAYUKI; OKUDA HAJIME; OBA YASUO |
| 发表日期 | 1989-09-21 |
| 专利号 | JP1989236668A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To enable a low voltage operation in a semiconductor device provided with a heterojunction involving a large energy difference across a band gap by a method wherein a superlattice layer is sandwiched between two semiconductor layers different from each other in band gap energy. CONSTITUTION:On a substrate 11, a superlattice layer 12, clad layer 13, active layer 14, clad layer 15, superlattice layer 16, and an electrode contact layer 17 are formed, in that order. On the electrode contact layer 17, an SiO2 film 18 is formed, and electrodes 19 and 20 are built on the N-side and P-side, respectively. Insertion of the superlattice layers 12 and 16 reduces the influence of a potential barrier along a heterojunction. This design produces a semiconductor laser diode capable of a low voltage operation in a DH laser device involving a large energy difference across a band gap between layers. |
| 公开日期 | 1989-09-21 |
| 申请日期 | 1988-03-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80984]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | SHIOZAWA HIDEO,ISHIKAWA MASAYUKI,OKUDA HAJIME,et al. Semiconductor laser device. JP1989236668A. 1989-09-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。