Semiconductor light emitting device
文献类型：专利
| 作者 | KUSUKI TOSHIHIRO |
| 发表日期 | 1989-09-22 |
| 专利号 | JP1989238182A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To provide a structure capable of enhancing the input impedance of a semiconductor laser to facilitate the matching of a driving circuit to a semiconductor light emitting device by burying an n-type InP clad layer, an InGaAsP active layer and a p-type InP clad layer in a p-type InP buried layer 2 and an n-type InP light enclosure layer, and further burying a P-type buried layer in a screen state in the clad layer. CONSTITUTION:The unnecessary part of the surface of an n-type InP clad layer 1 is removed to form a protrusion 30, and a p-type InP buried layer 2 is grown thereon. Then, the layer 2 is selectively removed to form a plurality of grooves 20, and the surfaces of the protrusions 30 of the layer 1 are exposed in the bottom of the grooves 20. Thereafter, an n-type InP clad layer 1', an InGaAsP active layer 4, a p-type InP layer 5 are sequentially laminated on a wafer, the unnecessary parts are removed to form it in a mesa state, the mesa is buried with an n-type InP layer 6 formed on its sidewall. Subsequently, p-type electrodes 7, 9 and an n-type electrode 8 are formed. Thus, a plurality of p-type InP layers 2' are buried in a screen state in the layers 1, 1', and the input impedance of the laser becomes several to several M or more of the conventional one. |
| 公开日期 | 1989-09-22 |
| 申请日期 | 1988-03-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80986]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KUSUKI TOSHIHIRO. Semiconductor light emitting device. JP1989238182A. 1989-09-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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