Semiconductor laser device
文献类型：专利
| 作者 | HIRONAKA MISAO; MIHASHI YUTAKA; KAKIMOTO SHIYOUICHI; SOGOU TOSHIO |
| 发表日期 | 1984-01-19 |
| 专利号 | JP1984009991A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a laser device having excellent characteristics and a long life, by providing a semiconductor layers, whose impurity diffusing speeds are different to each other, between a connecting layer and a upper clad layer, thereby narrowing the width of effective stripe shaped current path with good reproducibility. CONSTITUTION:Between an N type Ga1-yAlyAs clad layer 4 and an N type GaAs connecting layer 5, N type GaAs 9 and N type Ga1-zAlzAs 10 (z>0) are laminated. With respect to GaAlAs, the larger the Al crystal mixing ratio, the faster the diffusion speed, in P type impurities such as Zn. When Zn is diffuzed from the upper side of the N type GaAs 5 and P layers 11a and 11b are formed, the are a of the P layer in the layer 10 becomes wider than the area of the P layer in the layer 5. The width of the remaining N layer becomes narrower in the layer 10, which is closer to an active layer than the layer 5. Thus the width of a current path becomes gradually smaller toward the inside. An Al crystal mixing ratio (z) of the layer 10 is hardly affected by the oscillating characteristics of the laser itself and can be adjusted to a desired value. In this constitution, a device, which is characterized by a small threshold level, a stable lateral mode, no degradation in crystal property, and a long life, can be obtained. |
| 公开日期 | 1984-01-19 |
| 申请日期 | 1982-07-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80999]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | HIRONAKA MISAO,MIHASHI YUTAKA,KAKIMOTO SHIYOUICHI,et al. Semiconductor laser device. JP1984009991A. 1984-01-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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