Semiconductor light-emitting element
文献类型：专利
| 作者 | KINOSHITA HIDEAKI |
| 发表日期 | 1986-07-05 |
| 专利号 | JP1986147583A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting element |
| 英文摘要 | PURPOSE:To make the current construction into a more complete one at the luminous region by a method wherein, in the current constriction type LED, a current constricting layer is directly formed on the active layer of the LED. CONSTITUTION:A first clad layer 2 consisting of an n-type Ga0.65Al0.35As layer and an active layer 3 consisting of a p type GaAs layer is formed on an n-type GaAs substrate Then, a current constricting layer 5' is made to epitaxially grow directly on the active layer 3. The layer 5' is formed using an n-type Ga0.65A0.35As layer. Then, a selective etching is performed on the layer 5' and a circular striped groove 6' is formed to make a part of the active layer 3 expose. Then, a second clad layer 4 consisting of a p-type Ga0.65Al0.35As layer is made to epitaxially grow on the current constricting layer 5', and after that, a cap layer 7 consisting of a p-type GaAs layer is made to epitaxially grow. |
| 公开日期 | 1986-07-05 |
| 申请日期 | 1984-12-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81017]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | KINOSHITA HIDEAKI. Semiconductor light-emitting element. JP1986147583A. 1986-07-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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