Semiconductor laser device
文献类型：专利
| 作者 | TAKESHIMA MASUMI |
| 发表日期 | 1985-06-06 |
| 专利号 | JP1985101988A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To reduce the temperature change of the threshold of oscillating currents by making Bi contain in V group atoms in an active region consisting of a mixed crystal of a III-V compound at a specific ratio. CONSTITUTION:GaAs0.65Bi0.35 as a material in width larger than the forbidden band width of an active layer 3 formed on an n-GaAs substrate 1 is used as clad layers 2 and 4 on both sides of the layer 3. A mixture such as GaAs0.45Bi0.55 in which Bi is made to be contained in V group atoms at the ratio of 40-70% is used as the layer 3. Consequently, making Bi contain in a mixed crystal of a III-V compound results in an effect on the increase of spin separation energy DELTA0. Conditions DELTA0>EG by forbidden band width EG and DELTA0 have an effect on the reduction of the temperature change of a threshold current value especially when the constitutional ratio of Bi in V group atoms as constituents is kept within a range of 40-70%. |
| 公开日期 | 1985-06-06 |
| 申请日期 | 1983-11-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81021]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | TAKESHIMA MASUMI. Semiconductor laser device. JP1985101988A. 1985-06-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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