Integrated semiconductor laser device
文献类型：专利
| 作者 | TANI KENTARO; HOSODA MASAHIRO; SUGA YASUO; TAKAHASHI KOUSEI; TSUNODA ATSUISA; MATSUI KANEKI |
| 发表日期 | 1992-08-14 |
| 专利号 | JP1992225291A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Integrated semiconductor laser device |
| 英文摘要 | PURPOSE:To simultaneously obtain laser beams at many wavelengths by a method wherein the following are formed by utilizing an eaves-shaped semiconductor layer: a first laser part formed of a contact layer containing an insulating region; and a plurality of second laser parts formed on the contact layer. CONSTITUTION:A p-type etching stop layer 2, a p-type clad layer 3, an active layer 4, an n-type clad layer 5 and an n-type carrying layer 6 are formed on a p-type substrate 1 to form a first laser part. Then, the clad layers 3, 5 and the active layer 4 are etched. After the etching operation, an insulating film 7 is formed on the etching stop layer 2 by using a photolithographic operation, a plasma CVD operation or the like. After that, an n-type contact layer 8 is formed. Thereby, an insulating region (a) by means of the air is formed. An n-type clad layer 10, an active layer 11, a p-type clad layer 12 and a p-type cap layer 13 are formed on it as second laser parts. The n-type clad layer 10, the active layer 11, the p-type clad layer 12 and the p-type cap layer 13 are etched. |
| 公开日期 | 1992-08-14 |
| 申请日期 | 1990-12-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81031]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | TANI KENTARO,HOSODA MASAHIRO,SUGA YASUO,et al. Integrated semiconductor laser device. JP1992225291A. 1992-08-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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