半導体レ-ザおよびその使用方法
文献类型：专利
| 作者 | 松井 輝仁; 大塚 健一; 杉本 博司; 阿部 雄次; 大石 敏之 |
| 发表日期 | 1996-06-14 |
| 专利号 | JP2526898B2 |
| 著作权人 | 三菱電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザおよびその使用方法 |
| 英文摘要 | PURPOSE:To easily couple with an external optical fiber or the like and to obtain the high coupling efficiency at any wavelength by a method wherein two or more quantum well active layers, which are arranged on an identical light path in a propagation direction of a laser beam inside a single resonator and whose structure of an energy level is different, and a diffraction grating as a reflector on one side of the resonator are installed so that an electric current can be impressed independently of each other. CONSTITUTION:Quantum well active layers 14a, 14b are composed of AlxGa1-xAs of a material of the same constituents; their thickness is different from each other; accordingly, the discrete energy levels are different at the quantum well active layer 14a and the quantum well active layer 14b. If a function to select any wavelength is available, a laser is oscillated at a wavelength which corresponds to a range between these prescribed energy levels. In this semiconductor laser, a diffraction grating 18 as a reflector on one side of a resonator is installed at a part of an interface between a light waveguide layer 13 and a clad layer 12; accordingly, the laser is oscillated by the light of the prescribed energy level which corresponds to the wavelength satisfying Bragg's reflection condition of this diffraction grating 18. If an electric current is impressed on this diffraction grating 18 between a p-electrode 20b and an n-electrode 19, a length of a cycle of the diffraction grating 18 is changed effectively with reference to the light. |
| 公开日期 | 1996-08-21 |
| 申请日期 | 1987-05-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81033]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電機株式会社 |
| 推荐引用方式 GB/T 7714 | 松井 輝仁,大塚 健一,杉本 博司,等. 半導体レ-ザおよびその使用方法. JP2526898B2. 1996-06-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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