Semiconductor light source
文献类型:专利
作者 | TERAISHI KATSUHIRO |
发表日期 | 1991-02-12 |
专利号 | JP1991032083A |
著作权人 | SEIKO EPSON CORP |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor light source |
英文摘要 | PURPOSE:To cause the light to be emitted in the direction perpendicular to the substrate by forming a resonator in such a manner that effective refraction indices of the laser light and of the second harmonic generated light, i.e., SHG light, mode of the laser light are equal. CONSTITUTION:The lateral parts 4, 5, 6 of an optical waveguide are buried with a material whose refractive index is lower than that of optical waveguides 2, 3-1, 2, to effect optical confinement in the direction parallel to the substrate Then, a diffraction grating is formed on the surface of the optical waveguide 2, e.g. DBR diffraction function part 8. Further, two ring-type optical resonators are formed in square shape on the substrate 1 so that the optical waveguides 3-1, 2 and 2 can transmit and reflect the light many times. Herein, the resonator is arranged in such a manner that effective refraction indices of the laser light and of the SHG light are equal when second harmonic is generated in the resonator 2. Thus, the laser light is confined in the resonator 2, and the SHG light is emitted in the direction perpendicular to the substrate 1 via the diffraction grating. |
公开日期 | 1991-02-12 |
申请日期 | 1989-06-29 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/81037] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | SEIKO EPSON CORP |
推荐引用方式 GB/T 7714 | TERAISHI KATSUHIRO. Semiconductor light source. JP1991032083A. 1991-02-12. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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