Semiconductor laser element
文献类型：专利
| 作者 | MATSUI KANEKI; TANETANI MOTOTAKA; MORIMOTO TAIJI; YAMAMOTO SABUROU |
| 发表日期 | 1985-12-05 |
| 专利号 | JP1985245289A |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To enable the lateral mode stable over regions to a high-current injected region to be obtained by cutting off the high-degree lateral mode in a laser oscillation region by a method wherein a buried layer to adjust the difference in refractive index in the horizontal direction is formed in the junction plane on both sides the laser oscillation region with a curved active layer. CONSTITUTION:A mesa stripe 28 having a width almost equal to a waveguid width Wg1 or smaller than it is formed by removing both sides of the laser oscillation operating region. The difference in refractive index in the lateral direction is reduced by filling both sides of this stripe with GaAlAs layers 27, 27. Then, the Al mixed crystal ratio of the buried layer 27 us optimized with the curving degree of the active layer 24, thereby making the difference in refractive index with good reproducibility. As a result, laser oscillation occurs in the curved part 28, and the basic lateral mode stable over regions to a high-current injected region can be obtained. It follows that laser beams only pass through the flat window region of the active layer 24. This construction cuts off the high-degree lateral mode in the laser oscillation region and then yields the basic lateral mode stable over regions to a high-current injected region and the high output for strength against end-surface breakdown. |
| 公开日期 | 1985-12-05 |
| 申请日期 | 1984-05-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81039]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | MATSUI KANEKI,TANETANI MOTOTAKA,MORIMOTO TAIJI,et al. Semiconductor laser element. JP1985245289A. 1985-12-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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