Semiconductor laser
文献类型：专利
| 作者 | WATATANI, CHIKARA; TAKEMI, MASAYOSHI; OKUNUKI, YUICHIRO |
| 发表日期 | 2007-11-20 |
| 专利号 | US7298769 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | A p-type InP buffer layer containing Zn in a low concentration and an undoped InP buffer layer having a carrier concentration of 3×1017 cm−3 or less are stacked on a p-type InP substrate containing Zn. On the undoped InP buffer layer, a Mg-doped p-type InP cladding layer, an InGaAsP optical confinement layer, an InGaAsP MQW active layer, an n-type InGaAsP optical confinement layer, and an n-type InP cladding layer are successively stacked. The diffusion of Zn from the p-type InP substrate into the InGaAsP MQW active layer is suppressed. Moreover, a steep doping profile can be formed in the vicinity of the active layer so that deterioration of device characteristics is suppressed. |
| 公开日期 | 2007-11-20 |
| 申请日期 | 2006-04-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81056]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | WATATANI, CHIKARA,TAKEMI, MASAYOSHI,OKUNUKI, YUICHIRO. Semiconductor laser. US7298769. 2007-11-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。