量子井戸型半導体レーザ
文献类型：专利
| 作者 | 今仲 行一 |
| 发表日期 | 1998-02-27 |
| 专利号 | JP2752061B2 |
| 著作权人 | オムロン株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 量子井戸型半導体レーザ |
| 英文摘要 | PURPOSE:To obtain a quantum well type semiconductor laser, in which laser oscillation in short wavelengths is obtained, without narrowing the width of a quantum well, by providing a reflecting film having wavelength selectivity, in which two kinds of dielectric layers, which have a thickness of 1/4 the light emitting wavelength in transition between the desired high-order levels of the quantum wells and have different refractive indexes, are alternately laminated at the rear end surface of the semiconductor layer in four layers. CONSTITUTION:On a substrate 1, a buffer layer 2, a lower clad layer 3, an active layer in a quantum well structure, an upper clad layer 5 and a cap layer 6 are sequentially formed. Electrodes are formed on the lower surface of the substrate 1 and the upper surface of the cap layer 6. A reflecting film 7 having wavelength selectivity is formed at the rear end surface of a Fabry-Perot type quantum well semiconductor laser. The reflecting film 7 is formed by laminating dielectric layers 7a and 7b, whose refractive indexes are na and nb (nanot equal to nb), respectively, alternatly in four layers, so that the thickness of each layer is 1/4 the wavelength of the light within a crystal. Therefore, the reflectivity of the reflecting film 7 is large only for the light emitting wavelength in transition between the selected high-order levels. Thus, the high-order, i.e., short-wavelength laser oscillation is obtained. |
| 公开日期 | 1998-05-18 |
| 申请日期 | 1987-02-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81059]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | オムロン株式会社 |
| 推荐引用方式 GB/T 7714 | 今仲 行一. 量子井戸型半導体レーザ. JP2752061B2. 1998-02-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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