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文献类型：专利
| 作者 | ENDO KENJI |
| 发表日期 | 1992-03-31 |
| 专利号 | JP1992019714B2 |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To enhance reliability eliminating the influence of crystal defect in the neighborhood of crystal surface, by providing a compound semiconductor layer constituted of four elements with required thickness between an electrode forming region of the two kinds of electrodes. CONSTITUTION:An N type clad layer 12, P type InGaAsP active layer 13 and P type clad layer 14 are provided on an N type InP1 There are P type or N type InGaAsP barrier layer 20, N type InP electrode forming layer 15, P type impurity diffused region 17, Au-Zn alloy layer 16, P side electrode 18 and N side electrode 19. The migration of crystal defect generated in the neighborhood of the interface between the alloy layer 16 and the electrode forming layer 15 and migrating in the electrode forming layer is prevented by the barrier layer not to reach the active layer. Thus, the reliability is enhanced. |
| 公开日期 | 1992-03-31 |
| 申请日期 | 1981-04-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81062]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | ENDO KENJI. -. JP1992019714B2. 1992-03-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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