Surface emitting semiconductor laser
文献类型：专利
| 作者 | KONDO, TAKASHI; TAKEDA, KAZUTAKA |
| 发表日期 | 2012-09-18 |
| 专利号 | US8270448 |
| 著作权人 | FUJI XEROX CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Surface emitting semiconductor laser |
| 英文摘要 | A surface emitting semiconductor laser includes: a substrate; a first semiconductor multilayer reflector of a first conduction type that is formed on the substrate and is composed of stacked pairs of relatively high refractive index layers and relatively low refractive index layers; a cavity region that is formed on the first semiconductor multilayer reflector and includes an active region; and a second semiconductor multilayer reflector of a second conduction type that is formed on the cavity region and is composed of stacked pairs of relatively high refractive index layers and relatively low refractive index layers. A cavity length of a cavity that includes the cavity region and the active region between the first semiconductor multilayer reflector and the second semiconductor multilayer reflector is greater than an oscillation wavelength. |
| 公开日期 | 2012-09-18 |
| 申请日期 | 2010-07-26 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81067]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJI XEROX CO., LTD. |
| 推荐引用方式 GB/T 7714 | KONDO, TAKASHI,TAKEDA, KAZUTAKA. Surface emitting semiconductor laser. US8270448. 2012-09-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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