Semiconductor laser device
文献类型：专利
| 作者 | ITAYA KAZUHIKO; ISHIKAWA MASAYUKI; NARIZUKA SHIGEYA; WATANABE YUKIO |
| 发表日期 | 1989-11-17 |
| 专利号 | JP1989286479A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To prevent deterioration of current constricting effect and to improve the element characteristics by specifying a carrier concentration D of a current blocking layer in a semiconductor laser device having a double-hetero structure, a current blocking layer formed thereon and a contact layer of the second conductivity type formed on a clad layer of the second conductivity type and a current blocking layer of the first conductivity type. CONSTITUTION:A semiconductor laser apparatus of the invention includes a double- hetero structure consisting of an In1-w(Ga1-xAlx)wP clad layer of the first conductivity type, an In1-w(Ga1-yAly)wP active layer and a clad layer of the second conductivity type provided in contact with the active layer. The clad layer of the second conductivity type consists of one or more semiconductor layers including In1-w(Ga1-zAlz)wP (0cmcm. |
| 公开日期 | 1989-11-17 |
| 申请日期 | 1988-05-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81074]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | ITAYA KAZUHIKO,ISHIKAWA MASAYUKI,NARIZUKA SHIGEYA,et al. Semiconductor laser device. JP1989286479A. 1989-11-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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