A semiconductor laser device
文献类型：专利
| 作者 | STEPHEN PETER NAJDA |
| 发表日期 | 2004-03-31 |
| 专利号 | GB2346735B |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 英国 |
| 文献子类 | 授权发明 |
| 其他题名 | A semiconductor laser device |
| 英文摘要 | An SCH laser device fabricated in the (Al,Ga,In)P system has an active region (13) disposed within an optical guiding region (12, 14). The optical guiding region (12,14) is disposed between an n-doped cladding region (11) and a p-doped cladding region (15). Optical confinement layers (16, 17), are disposed at the interfaces between the optical guiding region (12, 14) and the cladding regions (11, 15). The optical confinement regions produce increased confinement of the optical field, and reduce the penetration of the optical field into the cladding regions. The optical confinement region (17) on the p-side of the device also serves as a potential barrier to the transport of electrons into the p-doped cladding region (15). The cladding regions (11,15) have a low Al mole fraction, so that they have a direct bandgap.; This prevents carrier loss by trapping in the DX level in the cladding regions. In an alternative embodiment, the cladding regions have a graded composition, with their composition at the interface with the optical confinement layers (16, 17) being such that the DX level in the cladding regions is degenerate with the X-conduction band in the optical confinement layers (16, 17). The energy of the DX level in the cladding region is greater than the Fermi level in the cladding region, and the energy of the DX level increases away from the optical guide region. |
| 公开日期 | 2004-03-31 |
| 申请日期 | 1999-02-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81075]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | STEPHEN PETER NAJDA. A semiconductor laser device. GB2346735B. 2004-03-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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