半導体レーザ
文献类型：专利
| 作者 | 北村 光弘; 麻多 進 |
| 发表日期 | 1995-12-20 |
| 专利号 | JP1995120836B2 |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ |
| 英文摘要 | PURPOSE:To sufficiently suppress injection carriers and to realize a semiconductor laser having a high output and high speed operable buried structure by so forming a high resistance semiconductor layer as to be brought into contact only with a reverse conductivity type semiconductor layer to its quasiconductivity type. CONSTITUTION:An N-type InP buffer layer 2, a non-doped In0.72Ga0.28As0.61P0.39 active layer 3 corresponding to 2, 3mum of emitting light wavelength, and a P-type InP clad layer 4 are laminated, for example, 1, 0.1 and 1mum thick on an N-type InP substrate Then, with an SiO2 film as a mask a mesa stripe 5 having 5mum of width and 5mum of height is formed, and a P-type InP layer 6, an N-type InP layer 7, an Fe-doped high resistance InP layer 8, and an N-type InP layer 9 are sequentially grown, for example, 0.1, 0.1, 3 and 0.2mum thick on a flat part. The shape of the stripe 5 is adjusted to so grow the layer 8 as to surround it with the layers 7, 9, and the leakage of holes is sufficiently suppressed, thereby providing an extremely high speed HR-BH-LD. |
| 公开日期 | 1995-12-20 |
| 申请日期 | 1988-03-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81079]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | 北村 光弘,麻多 進. 半導体レーザ. JP1995120836B2. 1995-12-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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