Semiconductor laser element
文献类型：专利
| 作者 | SASAKI KAZUAKI; SUYAMA NAOHIRO; KONDO MASAFUMI; KONDO MASAKI; MORIMOTO TAIJI; YAMAMOTO SABURO |
| 发表日期 | 1990-07-05 |
| 专利号 | JP1990174178A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To enable a broad output range of self-oscillator with low oscillator threshold valve by specifying the width of current injection region, the thickness of the second clad layer outside the current injection region, and the refractive index differences between the parts of the first and second light guide layers touching an active layer and the first and second clad layers, respectively. CONSTITUTION:The width of a current injection region 31, the thickness of the second clad layer 7 outside the current injection region 31, and the refractive index differencies between the parts of the first and second light guide layers 4, 6 touching an active layer 5 and the first and second clad layers 3, 7 are specified to be 2-5mum, 0.2-0.6mum, and 0.065-0.20 respectively. This lessens the variation of the refractive index of the active layer 5 by injected carriers. and the setting of the refractive index difference between the inside of a wave guide path and the outside does not vary by output greatly. Accordingly, self- oscillation becomes to occur through a broad output range and oscillation threshold current becomes smaller. |
| 公开日期 | 1990-07-05 |
| 申请日期 | 1988-12-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81081]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | SASAKI KAZUAKI,SUYAMA NAOHIRO,KONDO MASAFUMI,et al. Semiconductor laser element. JP1990174178A. 1990-07-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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