半導体レーザ装置
文献类型：专利
| 作者 | 木之下 秀明; 島田 直弘 |
| 发表日期 | 1994-02-02 |
| 专利号 | JP1994009282B2 |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ装置 |
| 英文摘要 | PURPOSE:To improve an InGaAlP semiconductor laser in performance by a method wherein an asymmerycal double heterostructure, which is composed of the band gap energy of a p-type clad layer formed on a p-type semiconductor substrate and an n-type clad layer formed sandwiching an active layer in between these two layers, is provided. CONSTITUTION:An asymmetrical double heterostructure, which is composed of the band gap energy of a p-type clad layer 3 formed on a p type semiconductor substrate 1 and an n-type clad layer 5 formed sandwiching an active layer 4 in between these two layers 3 and 5, is provided, and the light emitted from the active layer 4 is guided to the n-type clad layer 5 side. That is, in an InGaAlP semiconductor laser provided with a p-type III-V substrate, an element structure whose conductivity type is reverse to that of a conventional structure is built, and the band gap energy of the p-type upper clad layer which is one of an InGaAlP double hetero-structure is made to decrease, or a waveguide layer of a large refractive index is formed inside the n-type lower clad layer. By this setup, the light emitted from an active layer is guided to the n-type clad layer side so as to decrease the effect of the p-type upper clad layer on the characteristic of an element. |
| 公开日期 | 1994-02-02 |
| 申请日期 | 1988-09-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81087]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | 木之下 秀明,島田 直弘. 半導体レーザ装置. JP1994009282B2. 1994-02-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。