Semiconductor laser device
文献类型：专利
| 作者 | WAKITA KOUICHI; MATSUOKA TAKASHI |
| 发表日期 | 1984-09-28 |
| 专利号 | JP1984172286A |
| 著作权人 | NIPPON DENSHIN DENWA KOSHA |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To extract single wavelength laser beams with excellent directivity in the vertical direction to a P-N junction surface while inhibiting an unnecessary mode resulting from reflection by burying a light-emitting region and simplifying a lateral mode and reducing driving currents while confining beams changed into a uniaxial mode in a ring shape by using a diffraction grating. CONSTITUTION:A striped region 14 consisting of an InGaAsP active layer 2, a P-InGaAsP guide layer 3, a diffraction grating 4, a P-InP clad layer 5 and a P- InGaAsP contact layer 6 is formed on an N-InP substrate 1 to a ring shape with mutually parallel two straight line sections. The striped region 14 is buried by a P-InP optical confinement layer 7 and an N-InP current stopping layer 8. A projecting section 13, which is shaped along the direction of the striped region 14 and a section thereof takes an arcuate form, is formed to a section corresponding to one of both straight line sections of the surface on the electrode 9 side of the substrate The semiconductor laser device avoids a utilization for an optical resonator of a section where a semiconductor crystal is directly in contact with the outside air such as a cleavage plane, utilizes periodic index distribution shaped in a liquid crystal for the feedback of beams, and reduces reflection resulting from a large refractive index difference. |
| 公开日期 | 1984-09-28 |
| 申请日期 | 1983-03-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81091]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENSHIN DENWA KOSHA |
| 推荐引用方式 GB/T 7714 | WAKITA KOUICHI,MATSUOKA TAKASHI. Semiconductor laser device. JP1984172286A. 1984-09-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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