Semiconductor laser device
文献类型：专利
| 作者 | TATSUOKA KAZUKI; TAKIGAWA SHINICHI; KUME MASAHIRO; SHIMIZU YUICHI |
| 发表日期 | 1991-01-21 |
| 专利号 | JP1991012980A |
| 著作权人 | 松下電器産業株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To make it possible to obtain stabilized output optical power under any change in service conditions by allowing the front/rear ratio of optical output power which can be determined by a reflectance ratio in front and rear to have a similar change of reflectance ratio which is inclined to increase and decrease in terms of wavelength change in a coating film and canceling any change in the front/rear ratio. CONSTITUTION:A single layer of coating film 2 coated on a front end face of a semiconductor laser chip is coated with a dielectric thin film which comprises Al2O3, 0.175lambda (lambda stands for a wavelength in the dielectric). A rear end face is coated with two layers of coating films 3 and 4, which are dielectric thin films of Al, O3, 0.32lambda, Si, and 0.25lambda. Therefore, when the reflectance ratios R1 and R2 varies with the fluctuations in oscillation wavelength, the front/rear ratios P1/2 of the optical output power is varied as well. At the same time, this induces the tendency of the reflectance ratios R1 and R2 to increase and decrease, which makes it possible to cancel the changes in the front and rear ratio of the optical output power by controlling the magnitude of the inclination. It is, therefore, possible to obtain a stabilized output optical power against change in the service conditions. |
| 公开日期 | 1991-01-21 |
| 申请日期 | 1989-06-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81106]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電器産業株式会社 |
| 推荐引用方式 GB/T 7714 | TATSUOKA KAZUKI,TAKIGAWA SHINICHI,KUME MASAHIRO,et al. Semiconductor laser device. JP1991012980A. 1991-01-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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