Semiconductor light-emitting device
文献类型：专利
| 作者 | TAKAGI NOBUYUKI |
| 发表日期 | 1985-10-05 |
| 专利号 | JP1985196993A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To confine carriers excited when a refractive index guiding and a well layer are quantized by making a value obtained by subtracting the thickness of the outside of an excitation region from thickness in the excitation region in the well layer larger than a value acquired by subtracting the same thickness of a barrier layer. CONSTITUTION:An N type GaAlAs layer 2 is grown on a GaAs substrate 1 in an epitaxial manner, and a striped groove is formed at a position where an excitation region is shaped. Well layers 3W and barrier layers 3b are grown alternately on the layer 2. Consequently, multiple quantum well structure consisting of the well layers 3w of four layers and the barrier layers 3b of three layers is grown, and a confinement layer is grown. A contact region 5 is formed. An insulating film 6, a P type electrode 7 and an N side electrode 8 are shaping film 6, a P type electrode 7 and an N side electrode 8 are shaped, and cleavage, etc. are executed, thus completing a semiconductor laser. A transverse mode by a refractive index guiding is controlled by multiple well structure itself, and the effect of confinement of carriers is also obtained through quantitzation. |
| 公开日期 | 1985-10-05 |
| 申请日期 | 1984-03-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81114]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | TAKAGI NOBUYUKI. Semiconductor light-emitting device. JP1985196993A. 1985-10-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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