Semiconductor laser device
文献类型：专利
| 作者 | FUJISAKI YOSHIHISA; TSUJI SHINJI; KAYANE NAOKI; KAJIMURA TAKASHI; KASHIWADA YASUTOSHI |
| 发表日期 | 1985-07-15 |
| 专利号 | JP1985132379A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To oscillate a single wavelength in a high yield by forming a structure that the effective refractive index of a waveguide is varied periodically in a resonator longitudinal direction. CONSTITUTION:After an active layer 26 and a photoguide layer 24 are epitaxially grown on an n type InP substrate 27, a striped mask 29 for forming a diffraction grating is formed perpendicularly to the longitudinal direction of a resonator. The valley portion 28 of the grating formed in the layer 24 is p-conductive type and the crest portion 24 is an n type conductive type. When a periodic structure is formed in the photoguide layer, p type carrier implanted by the p type electrode is concentrated in a p type region 25 having low potential difference, the carrier density of the layer 26 is enhanced, the effective refractive index becomes extremely small in the valley of the grating, the carrier density decreases and the carrier density is increased in the crest of the grating. Thus, many elements can be formed in a single wavelength in a high yield. |
| 公开日期 | 1985-07-15 |
| 申请日期 | 1983-12-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81117]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | FUJISAKI YOSHIHISA,TSUJI SHINJI,KAYANE NAOKI,et al. Semiconductor laser device. JP1985132379A. 1985-07-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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