Semiconductor laser device
文献类型：专利
| 作者 | TODOROKI SATORU; OOBE ISAO |
| 发表日期 | 1985-10-08 |
| 专利号 | JP1985198792A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To prevent the increase of oscillated threshold current and the rise of temperature in the periphery of a stripe groove by a method wherein the lower surface of th stripe groove provided in the N type semiconductor substrate of the titled device is provided with an N region having the same width as the stripe groove. CONSTITUTION:The N type semiconductor substrate 1 is provided with an N region 2 of required width and depth, and with a shallow groove 3 having the same width and depth as the N region 2. An N type semiconductor clad layer 4 is provided over the stripe groove 3 and the substrate An N type or P type semiconductor active layer 5 is provided on the layer 4. A P type semicomductor clad layer 6 is provided on the layer 5. An N type semiconductor cap layer 7 is provided on the layer 6. A P diffused layer 8 having a depth reaching part of the layer 6 through the layer 7 is provided in opposition to the stripe groove 3. The outer surface of the layer 7 and the substrate 1 are provided with Au series electrodes 9. |
| 公开日期 | 1985-10-08 |
| 申请日期 | 1984-03-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81119]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | TODOROKI SATORU,OOBE ISAO. Semiconductor laser device. JP1985198792A. 1985-10-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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