Vapor growth method
文献类型：专利
| 作者 | NISHIBE TORU; IWAMOTO MASAMI; KINOSHITA JUNICHI |
| 发表日期 | 1986-08-12 |
| 专利号 | JP1986179525A |
| 著作权人 | KOGYO GIJUTSUIN |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Vapor growth method |
| 英文摘要 | PURPOSE:To enable the epitaxial growth of an InP layer without the deformation of a diffraction grating by growing the thin InP layer which is grown to the extent of burying the diffraction grating at a temperature which does not deform the diffraction grating again raising the temperature under the conditions being well controlled. CONSTITUTION:In a vapor growth method of growing an InP layer on a GaInAsP layer which has a diffraction grating, while a wafer of the GaInAsP layer is raised to a growth temperature, the wafer is held in the atmosphere of hydrogen at a temperature of 400-500[ deg.C] in which the diffraction grating is not thermally deformed and the InP layer can be deposited on the diffraction grating and then the first InP layer which has the film thickness required for burying at least the diffraction grating is epitaxially grown at the same temperature in which the wafer is held. Then, the second InP layer is epitaxially grown raising the temperature of the wafer higher than the above-mentioned growth temperature. |
| 公开日期 | 1986-08-12 |
| 申请日期 | 1985-02-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81125]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOGYO GIJUTSUIN |
| 推荐引用方式 GB/T 7714 | NISHIBE TORU,IWAMOTO MASAMI,KINOSHITA JUNICHI. Vapor growth method. JP1986179525A. 1986-08-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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