Semiconductor laser device
文献类型：专利
| 作者 | YOSHIKAWA AKIO; HIRAYAMA FUKUICHI; KUME MASAHIRO; TAJIRI FUMIKO; HAMADA TAKESHI |
| 发表日期 | 1986-03-14 |
| 专利号 | JP1986051983A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain the titled device of single lateral mode oscillation, low threshold current value action, and low noise characteristic by a method wherein a multilayer thin film having the double-hetero structure containing an active layer is formed on a conductive substrate including a groove of specific shape and dimension which cuts the P-N junction. CONSTITUTION:The groove 8 that cuts the P-N junction is provided in conductive substrates 1 and 2 having the P-N junction so as to be deep at the center, gradually shallower right and left, and 4.5-6.0mum in its width (d) at the substrate surface, and multilayer thin films 3-6 having the double-hetero structure containing the active layer 4 are formed on the substrate including the groove 8. For example, an N type GaAs current block layer 2 is grown on the P type GaAs substrate 1, and the stripe grown 8 reaching the substrate 1 is formed by chemical etching. Thereafter, a P type Ga1-xAlxAs clad layer 3, a Ga1-yAlyAs active layer 4, an N type Ga1-xAlxAs clad layer 5, and an N type GaAs cap layer 6 are successively grown by the liquid phase epitaxial method, and ohmic electrodes 7 are provided on the upper and lower surfaces. |
| 公开日期 | 1986-03-14 |
| 申请日期 | 1984-08-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81132]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | YOSHIKAWA AKIO,HIRAYAMA FUKUICHI,KUME MASAHIRO,et al. Semiconductor laser device. JP1986051983A. 1986-03-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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