Semiconductor laser
文献类型：专利
| 作者 | OUYA JIYUN; FUJITA TOSHIHIRO; MATSUDA KENICHI; SERIZAWA AKIMOTO |
| 发表日期 | 1987-04-23 |
| 专利号 | JP1987089388A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To offer the semiconductor laser without a noise due to a reflected return beam which is capable of effecting the single mode oscillation with short spectrum beam width and stabilized oscillation frequency by integrating a light waveguide comprising a distribution reflector on an edge plane on one side of an active region and a reflection function on the other edge plane on the same substrate. CONSTITUTION:A region 2 where a grating 5 is formed on an N-InP substrate 4 and an N-InGaAsP light waveguide layer 6 (band gap Eg=18eV) is laminated is a distribution reflector. A region 1 where no grating exists and an N-InP isolation layer 7, N-InGaAs active layer 8 (Eg=0.95eV) and a P-InP confinement layer 9 are laminated on the light waveguide layer 6 is an active layer. A region 3 where no grating exists and only the light waveguide layer 6 exists on the substrate 4 is a light waveguide. An edge plane 10 is a cleaved plane and edge planes 11 and 12 are formed by etching. |
| 公开日期 | 1987-04-23 |
| 申请日期 | 1985-10-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81136]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | OUYA JIYUN,FUJITA TOSHIHIRO,MATSUDA KENICHI,et al. Semiconductor laser. JP1987089388A. 1987-04-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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