Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device
文献类型：专利
| 作者 | TAKAGI, SHIMPEI; YOSHIZUMI, YUSUKE; KATAYAMA, KOJI; UENO, MASAKI; IKEGAMI, TAKATOSHI |
| 发表日期 | 2013-11-26 |
| 专利号 | US8594145 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device |
| 英文摘要 | A III-nitride semiconductor laser device includes a laser structure including a support base, a semiconductor region, and an electrode. The support base includes a hexagonal III-nitride semiconductor and a semipolar primary surface. The semiconductor region includes first and second cladding layers and an active layer arranged along an axis normal to the semipolar primary surface. A c-axis of the hexagonal III-nitride semiconductor is inclined at an angle ALPHA with respect to the normal axis toward an m-axis of the hexagonal III-nitride semiconductor. The laser structure includes first and second fractured faces that intersect with an m-n plane defined by the normal axis and the m-axis of the hexagonal III-nitride semiconductor. A laser cavity of the laser device includes the first and second fractured faces. Each of the first and second fractured faces have a stripe structure on an end face of the support base. |
| 公开日期 | 2013-11-26 |
| 申请日期 | 2010-07-15 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81137]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | TAKAGI, SHIMPEI,YOSHIZUMI, YUSUKE,KATAYAMA, KOJI,et al. Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device. US8594145. 2013-11-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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