面発光型半導体レーザの製造方法
文献类型：专利
| 作者 | 古沢 浩太郎; 茨木 晃; 川島 健児; 石川 徹 |
| 发表日期 | 1998-12-18 |
| 专利号 | JP2864258B2 |
| 著作权人 | 科学技術振興事業団 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 面発光型半導体レーザの製造方法 |
| 英文摘要 | PURPOSE:To make it possible to form a very small section to be buried which has a small dependence upon crystal azimuth performance and remove etching mask completely by using a laminated layer body of an SiO2 film and a resist layer as a mask, and then carrying out chemical etching for GaAlAs and the SiO2 film. CONSTITUTION:A buffer layer 2, a first clad layer 3, an activity layer 4, a second clad layer 5, a cap layer 6, and a first mask layer 7 are formed continuously on a substrate On the mask layer 7 there are formed an SiO2 film 8 and further a resist layer 9. The SiO2 film 8 excepting the area where the resist layer 9 is formed is removed by etching with an etchant for SiO2. Then, a lamination layer body of the SiO2 film 8 and the resist layer 9, which is used as a mask, is etched up to a section directly over the first clad layer 3 so that a round-shaped mesa section may be formed. Then, the first mask layer 7 is side-etched with a GaAlAs etchant and a non-reactive section 8a of the SiO2 film 8 is exposed. After that process is over, the SiO2 film 8 is etched and removed with the etchant for SiO2. During this operation, both the resist layer 9 and a reactant 10 are removed. |
| 公开日期 | 1999-03-03 |
| 申请日期 | 1989-12-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81156]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 科学技術振興事業団 |
| 推荐引用方式 GB/T 7714 | 古沢 浩太郎,茨木 晃,川島 健児,等. 面発光型半導体レーザの製造方法. JP2864258B2. 1998-12-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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