Manufacture of semiconductor laser
文献类型：专利
| 作者 | HORIKAWA HIDEAKI; SHIROMA MAKOTO; MATSUI YASUHIRO; KAMIJO TAKESHI |
| 发表日期 | 1992-05-01 |
| 专利号 | JP1992130691A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To form an active layer in a desired width and to prevent abnormal growth of a second conductivity type current narrowing layer of the side of a mesa by reducing in thickness an upper clad layer, selectively sidewise etching an InGaAsP layer, and forming the upper layer of the current narrowing layer lower than the upper surface of the mesa. CONSTITUTION:An upper clad layer is formed in two steps, the thickness of an InP layer for the upper clad layer formed in the first step is decreased, and a base InP layer is selectively etched to improve controllability of etching size of the base InP layer. Then, the InGaAsP layer is selectively sidewise etched to form an active layer in a desired width with excellent reproducibility, and yet abnormal growth of a current narrowing layer of the side of a mesa can be prevented. Further, a second conductivity type InP current narrowing layer is grown on its upper surface lower than the upper surface of the mesa to reduce the contact of the upper clad layer with the second conductivity type narrowing layer, thereby narrowing a leakage current passage and producing a high output. |
| 公开日期 | 1992-05-01 |
| 申请日期 | 1990-09-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81175]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HORIKAWA HIDEAKI,SHIROMA MAKOTO,MATSUI YASUHIRO,et al. Manufacture of semiconductor laser. JP1992130691A. 1992-05-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。