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文献类型：专利
| 作者 | KINOSHITA HIDEAKI; YUGE SHOZO |
| 发表日期 | 1993-10-08 |
| 专利号 | JP1993072118B2 |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To prevent emission light from shifting to be shorter in wavelength and an oscillation threshold current from increasing by a method wherein a semiconductor light emitting element of InGaAlP double hetero-junction structure is provided, where an active layer is doped with Si as an N-type dopant. CONSTITUTION:In an InGaAlP double hetero-junction type light emitting element, an In1-y(Ga1-xAlx)Py (0<=x<1, yapprox.=0.5) active layer 4 is doped with Si as a dopant which does not change the active layer 4 in crystal structure to prevent a dopant contained in a P-type InGaAlP clad layer 5 from diffusing into the active layer 4. By this setup, the emission light of a light emitting element is prevented from shifting to be shorter in wavelength and the oscillation threshold current is also prevented from increasing, and the element can be improved in yield and reliability. |
| 公开日期 | 1993-10-08 |
| 申请日期 | 1989-10-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81180]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | KINOSHITA HIDEAKI,YUGE SHOZO. -. JP1993072118B2. 1993-10-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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