Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | OGURA MUTSURO |
| 发表日期 | 1992-02-27 |
| 专利号 | JP1992061187A |
| 著作权人 | AGENCY OF IND SCIENCE & TECHNOL |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To provide a novel structure semiconductor laser by burying an active layer by forming a rectangular parallelepiped or a column with a vertical end surface on a substrate, and thereafter growing a double hetero structure, an n-blocking layer, and a P contact layer by a series of processes by MOCVD. CONSTITUTION:There is grown on a (100) n-GaAs substrate 101 a multi-layered film 102 of Al0.1Ga0.9As/Al0.7Ga0.3As is grown by a MOCVD organic metal gas phase growing method as a lower reflection layer, and an island-shaped protrusion 103 is formed by reactive ion etching with its end surface being vertical and shaped into a cube. Further, there are grown an N-Al0.4GaAs contact layer 104, a p-GaAs layer 105, and a p-Al0.4 Ga0.6As blocking layer 106 and there are simultaneously formed on the island-shaped protrusion 103 an N-Al0.4 GaAs cladding layer 107, a P-GaAs active layer 108, and a p-Al0.4 Ga0.5As cladding layer 109. |
| 公开日期 | 1992-02-27 |
| 申请日期 | 1990-06-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81183]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AGENCY OF IND SCIENCE & TECHNOL |
| 推荐引用方式 GB/T 7714 | OGURA MUTSURO. Semiconductor laser and manufacture thereof. JP1992061187A. 1992-02-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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