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文献类型：专利
| 作者 | HAYASHI SHOJI; KOBAYASHI MASAMICHI; SAWAI MASAAKI; ICHIKI MASAHIRO; NAKA HIROSHI |
| 发表日期 | 1993-01-14 |
| 专利号 | JP1993003155B2 |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To reduce the rate of generation of a short circuit by a projecting electrode section by preventing the extension of an anode electrode section in the periphery of a laser chip, bevelling the corner sections of the anode electrode section and further keeping the anode electrode section away from the corners of the laser chip. CONSTITUTION:The main surface side of a substrate 4 except an electrode contact region in multilayer growth layers 2 is coated with an insulating film 12. An anode electrode 3 consisting of an Au group electrode is formed on the main surface side of the substrate 4. The anode electrode 3 extends in the peripheral section of a laser chip 1 corresponding to the end section of a resonator, but other peripheral sections are separated from the periphery of the laser chip 1 by size such as approximately 50mum. Four corners of the anode electrode 3 corresponding to the corner sections of the laser chip 1 consisting of a rectangle are bevelled. Consequently, when a wafer is divided, probability in which a broken section reaches to the anode electrode section 3 is reduced extremely even when the corner of the laser chip 1 taking the rectangule is broken. Accordingly, the electrode does not hang down due to the breaking of the corner section of the laser chip 1, and the rate of generation of a short circuit can be reduced. |
| 公开日期 | 1993-01-14 |
| 申请日期 | 1984-04-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81185]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | HAYASHI SHOJI,KOBAYASHI MASAMICHI,SAWAI MASAAKI,et al. -. JP1993003155B2. 1993-01-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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