Semiconductor light emitting element
文献类型：专利
| 作者 | TSUNODA ATSUISA; TAKAHASHI KOUSEI; HOSODA MASAHIRO |
| 发表日期 | 1992-05-21 |
| 专利号 | JP1992147687A |
| 著作权人 | シャープ株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element |
| 英文摘要 | PURPOSE:To obtain a semiconductor light emitting element which controls a lateral mode with high reproducibility and is not early deteriorated even in operation by a high output by providing an etching stop layer on a second clad layer, and providing a third clad layer on the stop layer. CONSTITUTION:A p-type GaAs second contact layer 109 is etched in a stripe state by using a GaAs selective etchant. Then, a p-type Ga0.5In0.5P first contact layer 108 is etched in a stripe state. After a resist pattern 110 is removed, with the stripelike layer 109 and the layer 108 as masks a p-type (Al0.7Ga0.3)0.5 In0.5P third clad layer 107 is etched in a stripe state. Thus, a p-type GaAs third contact layer 111 is so grown by an MBE method as to bury the layers 107, 108 and 109 in an exposed p-type Ga0.5In0.5P etching stop layer 106. |
| 公开日期 | 1992-05-21 |
| 申请日期 | 1990-10-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/81191]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | シャープ株式会社 |
| 推荐引用方式 GB/T 7714 | TSUNODA ATSUISA,TAKAHASHI KOUSEI,HOSODA MASAHIRO. Semiconductor light emitting element. JP1992147687A. 1992-05-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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